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Dry film negative photoresist for MEMS and Wafer-Level Packaging

Resistance to extreme moisture conditions and corrosive chemicals
Dry film negative photoresist for MEMS and Wafer-Level Packaging

Dry film negative photoresist for MEMS and Wafer-Level Packaging
The dry-film negative photo resist is capable of extremely fine line and space definition in complex patterns. Source: Engineered Material Systems, Inc.

Engineered Material Systems, Inc., a supplier of negative photoresist materials for MEMS and TSV passivation/sealing applications, is pleased to introduce the DF-2005 dry-film negative photo resist for use in micro-electro mechanical systems (MEMS), wafer-level packaging and CMOS applications (metallization). This material formulation has been optimized for hot roll lamination and processing on MEMS and IC wafers.

The dry-film negative photo resist is capable of extremely fine line and space definition in complex patterns. The cured chemistry can withstand harsh environments including resistance to extreme moisture conditions and corrosive chemicals.

It is tougher (less brittle) than most on the market with a glass transition temperature of 145°C (By DMA Tan Delta) and a moderate modulus of 4.5 GPa at 25°C. It is hydrophobic in nature, providing chemical and moisture resistance. DF-2005 is compatible with and can be used in contact with the EMS line of spin-coatable photoresists.

DF-2005 is the latest addition to the company’s full line of film and liquid negative photo resists formulated for making microfluidic channels on MEMS devices and integrated circuits.

www.emsadhesives.com

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